Technology Overview

HV CMOS

HV CMOS

TV 1.8/18V (HD180IHL5) 1.2V/18V FEOL 110nm IT Tablet Notebook Monitor 1.8/9V/13.5V (HD180IEL6)
Available (Mass Prod.) Available (New) Under Developing Under Planning

No. 1 Supplier in Korea

Qualified Technologies

Stabilized FAB Process for Advanced Driver ICs

Design Infra Service

BCDMOS

Abbreviation L/S* : Level Shifter, Load Switch C/P : Charge Pump

BCDMOS
Target Applications	HB180ENH: High Performance
	1.8V, 5.0V(6.0V), 12V~40V 23 Layers ⓐ MV & HV, 1P3M Zener Diode(6.2/7.2V), SBD(20V), MiM, HRI MTP / OTP IP SRAM(1.8V Compiler / 5.0V)
	HB180ENH3: Ultra High Performance
Ultra Low Ron.sp High Performance 150nm BEOL Design Rule HDP Full-fill Passivation Cost effective OTP/MTP and SRAM IP Various Option Devices Proven through Many MP Histories	1.8V, 5.0V, 12V~30V(40V) Ultra Low Ron.sp LDMOS 21 Layers ⓐ 5V & HV (~30V), 1P3M Fully Isolated LD/DENMOS(~24V) Zener Diode(6.2V), 20V SBD(Q3’ 19), MiM, HRI YMC MTP, OTP, SRAM(1.8V / 5.0V)

CIS

We provides matched service based on silicon proven pixel, customer needs and applications

Logic/eFlash

I/S Compatible and Mask Reduction eFlash Solution

MEMS

MEMS Microphone Chip Table
MEMS Microphone Chip 구조

MEMS Mic. Sensor	MEMS Mic. RIOC
MEMS Specialty Process - Thick Film - Deep Si Etching - Sacrificial Etching	CMOS Process - 0.18um Tech - Mixed Signal - 1.8V/3.3V

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